View DG308BDY_7117666.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

vishay siliconix dg308b, dg309b document number: 70047 s11-0303-rev. g, 28-feb-11 www.vishay.com 1 improved quad cmos analog switches features ? 22 v supply voltage rating ? cmos compatible logic ? low on-resistance - r ds(on) : 45 ? ? low leakage - i d(on) : 20 pa ? single supply operation possible ? extended temperature range ? fast switching - t on : < 200 ns ? low glitching - q: 1 pc benefits ? wide analog signal range ? simple logic interface ? higher accuracy ? minimum transients ? reduced power consumption ? superior to dg308a, dg309 ? space savings (tssop) applications ? industrial instrumentation ? test equipment ? communications systems ? disk drives ? computer peripherals ? portable instruments ? sample-and-hold circuits description the dg308b, dg309b analog s witches are highly improved versions of the industry-s tandard dg308a, dg309. these devices are fabricated in vishay siliconix? proprietary silicon gate cmos process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. these quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process contro l, computer peripherals, etc. an improved charge injection compensation design minimizes switching transie nts. the dg308b and dg309b can handle up to 22 v input signals. an epitaxial layer prevents latchup. all devices feature true bi-dir ectional performance in the on condition, and will block signals to the supply levels in the off condition. the dg308b is a normally open switch and the dg309b is a normally closed switch. (see truth table.) functional block diagram and pin configuration logic ?0? ?? 3.5 v logic ?1? ?? 11 v * pb containing terminations are not rohs compliant, exemptions may apply dg308b in 1 in 2 d 1 d 2 s 1 s 2 v- v+ gnd nc s 4 s 3 d 4 d 3 in 4 in 3 dual-in-line, soic and tssop 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 top view truth table logic dg308b dg309b 0 off on 1onoff
www.vishay.com 2 document number: 70047 s11-0303-rev. g, 28-feb-11 vishay siliconix dg308b, dg309b notes: a. signals on s x , d x , or in x exceeding v+ or v- will be clamped by internal diodes . limit forward diode current to maximum current ratings. b. all leads welded or soldered to pc board. c. derate 6.5 mw/c above 75 c. d. derate 7.6 mw/c above 75 c. e. derate 12 mw/c above 75 c. ordering information temp. range package part number - 40 c to 85 c 16-pin plasticdip dg308bdj dg308bdj-e3 dg309bdj dg309bdj-e3 16-pin narrow soic DG308BDY DG308BDY-e3 DG308BDY-t1 DG308BDY-t1-e3 dg309bdy dg309bdy-e3 dg309bdy-t1 dg309bdy-t1-e3 16-pin tssop dg308bdq dg308bdq-e3 dg308bdq-t1 dg308bdq-t1-e3 dg309bdq dg309bdq-e3 dg309bdq-t1 dg309bdq-t1-e3 absolute maximum ratings parameter limit unit voltages referenced, v+ to v- 44 v gnd 25 digital inputs a , v s , v d (v-) - 2 to (v+) + 2 or 30 ma, whichever occurs first current, any terminal 30 ma peak current, s or d (pulsed at 1 ms, 10 % duty cycle max.) 100 storage temperature (ak suffix) - 65 to 150 c (dj, dy and dq suffix) - 65 to 125 power dissipation (package) b 16-pin plastic dip c 470 mw 16-pin narrow soic and tssop d 640 16-pin cerdip e 900
document number: 70047 s11-0303-rev. g, 28-feb-11 www.vishay.com 3 vishay siliconix dg308b, dg309b specifications a parameter symbol test conditions unless specified v+ = 15 v, v- = - 15 v v in = 11 v, 3.5 v f temp. b typ. c a suffix - 55 c to 125 c d suffix - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full - 15 15 - 15 15 v drain-source on-resistance r ds(on) v d = 10 v, i s = 1 ma room full 45 85 100 85 100 ? r ds(on) match ? r ds(on) room 2 % source off leakage current i s(off) v s = 14 v, v d = 14 v room full 0.01 - 0.5 - 20 0.5 20 - 0.5 - 5 0.5 5 na drain off leakage current i d(off) v d = 14 v, v s = 14 v room full 0.01 - 0.5 - 20 0.5 20 - 0.5 - 5 0.5 5 drain on leakage current i d(on) v s = v d = 14 v room full 0.02 - 0.5 - 40 0.5 40 - 0.5 - 10 0.5 10 digital control input, voltage high v inh full 11 11 v input, voltage low v inl full 3.5 3.5 input current i inh or i inl v inh or v inl full - 11- 11a input capacitance c in room 5 pf dynamic characteristics tu r n - o n t i m e t on v s = 3 v, see figure 2 room 200 200 ns turn-off time t off room 150 150 charge injection q c l = 1000 pf, v g = 0 v, r g = 0 ? room 1 pc source-off capacitance c s(off) v s = 0 v, f = 1 mhz, room 5 pf drain-off capacitance c d(off) room 5 channel-on capacitance c d(on) v d = v s = 0 v, f = 1 mhz room 16 off-isolation oirr c l = 15 pf, r l = 50 ??? v s = 1 v rms , f = 100 khz room 90 db channel-to-channel crosstalk x ta l k room 95 power supply positive supply current i+ v in = 0 v or 15 v room full 1 5 1 5 a negative supply current i- room full - 1 - 5 - 1 - 5 power supply range for continuous operation v op full 4 22 4 22 v
www.vishay.com 4 document number: 70047 s11-0303-rev. g, 28-feb-11 vishay siliconix dg308b, dg309b notes: a. refer to process option flowchart . b. room = 25 c, full = as determined by the operating temperature suffix. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. the algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data s heet. e. guaranteed by design, not subject to production test. f. v in = input voltage to perform proper function. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications a (for single supply) parameter symbol test conditions unless specified v+ = 12 v, v- = 0 v v in = 11 v, 3.5 v f temp. b typ. c a suffix - 55 c to 125 c d suffix - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full 0 12 0 12 v drain-source on-resistance r ds(on) v d = 3 v, 8 v, i s = 1 ma room full 90 160 200 160 200 ? dynamic characteristics tu r n - o n t i m e t on v s = 8 v, see figure 2 room 300 300 ns turn-off time t off room 200 200 charge injection q c l = 1 nf, v gen = 6 v, r gen = 0 ? room 4 pc power supply positive supply current i+ v in = 0 v or 12 v room full 1 5 1 5 a negative supply current i- room full - 1 - 5 - 1 - 5 power supply range for continuous operation v op full 4 44 4 44 v
document number: 70047 s11-0303-rev. g, 28-feb-11 www.vishay.com 5 vishay siliconix dg308b, dg309b typical characteristics (25 c, unless otherwise noted) r ds(on) vs. v d and power supply voltages r ds(on) vs. v d and single power supply voltages leakage currents vs. temperature - 20 - 16 - 12 - 8 - 4 0 4 8 12 16 20 40 50 60 70 80 90 100 110 5 v v d - drain voltage (v) 10 v 15 v 20 v 30 20 10 r ds(on) - drain-source on-resistance ( ? ) 0246810121416 0 25 50 75 100 125 150 175 200 225 v d - drain voltage (v) 250 v+ = 5 v 7 v 10 v 12 v 15 v r ds(on) - drain-source on-resistance ( ? ) - 55 25 45 5 - 15 65 - 35 85 105 125 v+ = 15 v v- = - 15 v v s, v d = 14 v i s( of f) , i d(of f) 1 na 10 pa 1 pa temperature (c) i s, i d - current 100 pa r ds(on) vs. v d and temperature leakage currents vs. analog voltage q s , q d - charge injection vs. analog voltage 0 10 20 30 40 50 - 15 - 10 - 5 0 5 10 15 v d - drain voltage (v) 125 c 85 c 25 c - 55 c v+ = 15 v v- = - 15 v 60 70 80 90 100 r ds(on) - drain-source on-resistance ( ? ) i d(on) - 20 - 15 - 10 - 5 0 5 10 15 20 analog voltage i s, i d - current (pa) 40 30 20 10 0 - 10 - 20 - 30 - 40 i s( of f) , i d(of f) v+ = 22 v v- = - 22 v t a = 25 c - 15 - 10 - 5 0 5 10 15 30 20 10 0 - 10 - 20 - 30 v+ = 15 v v- = - 15 v v+ = 12 v v- = 0 v analog v oltage (v) q - charge (pc)
www.vishay.com 6 document number: 70047 s11-0303-rev. g, 28-feb-11 vishay siliconix dg308b, dg309b typical characteristics (25 c, unless otherwise noted) schematic diagram (typical channel) off isolation vs. frequency 10 k 100 k 1 m 10 m 40 50 60 70 80 90 100 11 0 120 f - frequency (hz) oirr (db) v+ = 15 v v- = - 15 v r l = 50 ? figure 1. d x s x v+ in x v? level shift/ gnd v+ v- drive
document number: 70047 s11-0303-rev. g, 28-feb-11 www.vishay.com 7 vishay siliconix dg308b, dg309b test circuits figure 2. switching time 50 % 0 v 12 v t off t on v o t r < 20 ns t f < 20 ns logic input switch output 90 % c l 35 pf r l 1 k ? v o = v s r l + r ds(on) r l v s = + 3 v v o v- v+ in s d 12 v - 15 v gnd + 15 v figure 3. off isolation s in 50 ? d r g = 50 ?? v s v o 0 v, 15 v of f isolation = 20 log v s v o v+ - 15 v gnd v- c c + 15 v figure 4. channel-to-channel crosstalk in 1 0 v, 15 v v o + 15 v - 15 v gnd v+ v- nc x ta l k isolation = 20 log c v s c v o 0 v, 15 v 50 ? v s s 1 in 2 s 2 r g = 50 ? d 1 d 2 c = rf bypass 50 ? figure 5. charge injection c l 1000 pf v g 12 v d v+ v- r g - 15 v gnd in s v o + 15 v v o ? v o in x on on off ? v o = measured voltage error due to charge injection the charge injection in coulombs is q = c l x ? v o
www.vishay.com 8 document number: 70047 s11-0303-rev. g, 28-feb-11 vishay siliconix dg308b, dg309b applications figure 6. a precision amplifier with digitally programmable inputs and gains gain = gain 1 (x 1) gain 2 (x 10) gain 3 (x 100) gain 4 (x 1000) - 15 v + 15 v - 15 v gnd dg419 30 pf + 15 v + 15 v - 15 v dg308b logic high = switch on + - lm101a r f + r g r g v in1 v in2 ch r f1 18 k ? r f1 9.9 k ? r f1 100 k ? r g3 100 ? r g2 100 ? r g1 2 k ? v+ v- gnd v- + 5 v v l figure 7. sample-and-hold lm101a + 15 v - 15 v 30 pf 15 v - 15 v v+ v- dg309b 50 pf 1000 pf j202 j500 j507 + 15 v 2n4400 - 15 v v in v out 1 k ?? 200 ? 5 m ?? 5.1 m ?? aquisition t ime = 25 s aperature t ime = 1 s sample to hold of fset = 5 mv droop rate = 5 mv/s logic input low = sample high = hold - +
document number: 70047 s11-0303-rev. g, 28-feb-11 www.vishay.com 9 vishay siliconix dg308b, dg309b applications vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70047 . figure 8. active low pass filter with digitally selected break frequency ttl control 150 pf 1500 pf + 15 v dg309b gnd 30 pf lm101a + 15 v - 15 v frequency ? hz 1 1 0 100 1 k 10 k 100 k 1 m - 40 0 160 120 80 v oltage gain db f c4 select f c3 select f c2 select f c1 select r 1 = 10 k ? r 2 = 10 k ? r 3 = 1 m ? v out v 1 v- c 4 c 3 c 2 c 1 0.015 f 0.15 f - 15 v - + 40 f c1 f c2 f c3 f c4 f l1 f l2 f l3 f l4 a l (v oltage gain below break frequency) = = 100 (40 db) r 3 r 1 f c (break frequency) = 1 2 ? r 3 c x 1 2 ? r 1 c x f l (unity gain frequency) = max attenuation = r ds(on) 10 k ? ? - 40 db
all leads 0.101 mm 0.004 in e h c d e b a1 l 4 3 12 8 7 56 13 14 16 15 9 10 12 11 package information vishay siliconix document number: 71194 02-jul-01 www.vishay.com 1
jedec part number: ms-012 dim min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.38 0.51 0.015 0.020 c 0.18 0.23 0.007 0.009 d 9.80 10.00 0.385 0.393 e 3.80 4.00 0.149 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 l 0.50 0.93 0.020 0.037 0 8 0 8 ecn: s-03946?rev. f, 09-jul-01 dwg: 5300
e 1 e q 1 a l a 1 e 1 b b 1 s c e a d 15 max 12345678 16 15 14 13 12 11 10 9 package information vishay siliconix document number: 71261 06-jul-01 www.vishay.com 1

dim min max min max a 3.81 5.08 0.150 0.200 a 1 0.38 1.27 0.015 0.050 b 0.38 0.51 0.015 0.020 b 1 0.89 1.65 0.035 0.065 c 0.20 0.30 0.008 0.012 d 18.93 21.33 0.745 0.840 e 7.62 8.26 0.300 0.325 e 1 5.59 7.11 0.220 0.280 e 1 2.29 2.79 0.090 0.110 e a 7.37 7.87 0.290 0.310 l 2.79 3.81 0.110 0.150 q 1 1.27 2.03 0.050 0.080 s 0.38 1.52 .015 0.060 ecn: s-03946?rev. d, 09-jul-01 dwg: 5482
e 1 e q 1 a l a 1 e 1 b b 1 l 1 s c e a d 12 3 4 5 6 7 8 16 15 14 13 12 11 10 9 package information vishay siliconix document number: 71282 03-jul-01 www.vishay.com 1
dim min max min max a 4.06 5.08 0.160 0.200 a 1 0.51 1.14 0.020 0.045 b 0.38 0.51 0.015 0.020 b 1 1.14 1.65 0.045 0.065 c 0.20 0.30 0.008 0.012 d 19.05 19.56 0.750 0.770 e 7.62 8.26 0.300 0.325 e 1 6.60 7.62 0.260 0.300 e 1 2.54 bsc 0.100 bsc e a 7.62 bsc 0.300 bsc l 3.18 3.81 0.125 0.150 l 1 3.81 5.08 0.150 0.200 q 1 1.27 2.16 0.050 0.085 s 0.38 1.14 0.015 0.045 0 15 0 15 ecn: s-03946?rev. g, 09-jul-01 dwg: 5403
vishay siliconix package information document number: 74417 23-oct-06 www.vishay.com 1 symbols dimensions in millimeters min nom max a - 1.10 1.20 a1 0.05 0.10 0.15 a2 - 1.00 1.05 b 0.22 0.28 0.38 c - 0.127 - d 4.90 5.00 5.10 e 6.10 6.40 6.70 e1 4.30 4.40 4.50 e-0.65- l 0.50 0.60 0.70 l1 0.90 1.00 1.10 y--0.10 1036 ecn: s-61920-rev. d, 23-oct-06 dwg: 5624 tssop: 16-lead
pad pattern www.vishay.com vishay siliconix revision: 02-sep-11 1 document number: 63550 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 recommended minimum pad for tssop-16 0.281 (7.15) recommended minimum pads dimensions in inches (mm) 0.171 (4.35) 0.055 (1.40) 0.012 (0.30) 0.026 (0.65) 0.014 (0.35) 0.193 (4.90)
application note 826 vishay siliconix www.vishay.com document number: 72608 24 revision: 21-jan-08 application note recommended minimum pads for so-16 recommended minimum pads for so-16 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) 0.372 (9.449) return to index return to index
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.

▲Up To Search▲

Price & Availability of DG308BDY

	To Download DG308BDY Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .